Tamotsu Hashizume

Condensed Matter Physics · 2001–2016

A researcher in the Science corpus: 10 papers; trusts 1 researcher and is trusted by 5 researchers here, as inferred from the citation graph.

Subfields

• Condensed Matter Physics — 81 citations into it; #857 of 1,948 by trust here, #407 by citations
• Electrical and Electronic Engineering — 80 citations into it; #7,505 of 16,539 by trust here, #6,381 by citations
• Electronic, Optical and Magnetic Materials — 39 citations into it

Whom Tamotsu Hashizume trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Umesh K. Mishra

Who trusts Tamotsu Hashizume overall

1. M. Kneissl
2. Zenji Yatabe
3. J. Rass
4. K. Johnston

Papers from Tamotsu Hashizume's perspective

Ordered by how strongly the researchers Tamotsu Hashizume trusts endorse each paper. Same corpus, a different order for every researcher.

1. High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)
2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
4. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (IEEE Electron Device Letters)
5. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
6. 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
7. 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
8. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs (IEEE Electron Device Letters)
9. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
10. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Their papers

• Insulated gate and surface passivation structures for GaN-based power transistors (2016) — 178 citations
• Leakage mechanism in GaN and AlGaN Schottky interfaces (2004) — 193 citations
• Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors (2008) — 185 citations
• Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures (2001) — 152 citations
• Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors (2003) — 223 citations
• Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface (2011) — 212 citations
• Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric (2003) — 247 citations
• Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors (2013) — 163 citations
• Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes (2004) — 170 citations
• Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors (2003) — 214 citations