Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

By Y. Hori, Zenji Yatabe, Tamotsu Hashizume. 2013

163 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/c5dacba11a477842a01b84aeed12022b96753413