Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

By Tamotsu Hashizume, S. Ootomo, Susumu Oyama, M. Konishi, H. Hasegawa. 2001

152 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4d109ae468d89bb85655c7841cb02a7ae703f241

How researchers see this paper

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In Condensed Matter Physics

1. Jean-Francois Carlin

In Electronic, Optical and Magnetic Materials

1. Jean-Francois Carlin

In Materials Chemistry

1. U. Kaiser
2. A. Chuvilin

Citations in the corpus

• Testing the Temperature Limits of GaN-Based HEMT Devices (2010, result): “This may also be indicated by a recent experiment reporting on AlGaN/ GaN MISFET technology, where the gate metal had been deposited prior to the ohmic contact formation (and alloying at 850 ◦C) [35].”