Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
By Chihoko Mizue, Y. Hori, M. Miczek, Tamotsu Hashizume. 2011
212 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/335a6ed387f95aea17d1993a1ad224923a10ebcb
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In Condensed Matter Physics
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon (2012, background): “High-quality Al2O3 films are deposited by atomic layer deposition (ALD), but the density of interface states (Dit) is still large: on the order of 10(12) cm−2 · eV−1 or higher [5], [6], believed to result in devices with poor breakdown behavior [7], [8].”
- Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film (2012, background): “2185921 states exist at the Al2O3/(Al)GaN interface [8], [9] partially due to the easy formation of Ga–O bonds [10].”