Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

By Tamotsu Hashizume, S. Ootomo, T. Inagaki, H. Hasegawa. 2003

214 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/41d421907d7be29dd7f0bc83b723d85167570aef