Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

By H. Hasegawa, T. Inagaki, S. Ootomo, Tamotsu Hashizume. 2003

223 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/1c845b1d1c8edbc98b1d9538bba8c64ce6baa093

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In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Enrico Zanoni
3. Giovanni Verzellesi
4. S. Karpov

In Electrical and Electronic Engineering

1. Gaudenzio Meneghesso
2. Enrico Zanoni

In Electronic, Optical and Magnetic Materials

1. Enrico Zanoni
2. Gaudenzio Meneghesso
3. Giovanni Verzellesi

Citations in the corpus

• Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs (2006, background): “] It is worth noting that the effect 1) is consistent with the “thin surface barrier” model for the gate-leakage current in GaN HEMTs proposed in [26].”
• A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “As we have mentioned above, GaN based HEMTs suffer the effect of current collapse [128], which can temporary increase the dynamic on-resistance due to the charge trapping effects.”
• Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs (2008, background): “In actual devices, both surface traps at the exposed GaN surface and volume distributions of near-surface traps [20], [25] can be”