Leakage mechanism in GaN and AlGaN Schottky interfaces

By Tamotsu Hashizume, J. Kotani, H. Hasegawa. 2004

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Schottky-quantum dot photovoltaics for efficient infrared power conversion (2008, background): “In practice though, barrier height dependence on electric field and tunnelling effects lead to a bias-dependent current in reverse bias [109, 115].”
III-Nitride Ultraviolet Emitters: Technology and Applications (2015, methodology): “55N on PSS (a), Nomarski micrograph of the surface (b) [94] 68 E.”
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013, unknown): “[26], [55], [67]; or 3) deep-levels charge de-trapping by electron trap-assisted-tunneling mechanisms [14], [15], [54], [60], [70].”
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006, background): “dominated by the TE mechanism but other mechanisms, such as vertical tunneling [38], surface barrier thinning [39], and”