Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs
By V. Tilak, Bruce M. Green, V. Kaper, Hyungtak Kim, T. Prunty, J. Smart, James R. Shealy, Lester F. Eastman. IEEE Electron Device Letters, 2001
155 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/750d2f76ebbe927c69ab30d08e98a9e82441fd86
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Comparison of GaN HEMTs on Diamond and SiC Substrates (2007, background): “However, regardless of substrate, thermal limitations on device performance emerge under conditions of high bias and power drive [3].”
- Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination (2003, background): “Presence of such a high 2DEG, in addition to high breakdown electric field for III-nitrides, results in output power densities up to 10.7 W/mm [ 5 ], roughly an order of magnitude higher than that achievable from GaAs based devices.”
- A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC (2004, background): “Therefore, considering temperature-dependent characteristics in a large-signal model is important to correctly predict high power density operation, e.g., at power levels 10 W/mm at 10 GHz [ 20 ].”
- AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz (2002, background): “7 W/mm at 10 GHz has been achieved on GaN-based devices yet their suitability for power applications at frequencies 30 GHz is currently being limited by the speed of these devices [6].”