Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
By Tamotsu Hashizume, S. Ootomo, H. Hasegawa. 2003
247 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/4b23cbf94c19497d11c384dc224187bcf99415c6
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In Condensed Matter Physics
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film (2012, methodology): “The importance of reducing the oxygen concentration is illustrated by our recent experiment of implementing a passivation scheme featuring the in situ RPP and a 15-nm ALD-grown Al2O3 as the passivation layer.”