Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors
By M. Miczek, Chihoko Mizue, Tamotsu Hashizume, B. Adamowicz, JAP08-Marcin.pdf. 2008
185 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f6190000645db53bfcd0412ea94ac72ccc2ddbd6
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- GaN-on-Si Power Technology: Devices and Applications (2017, background): “In an E-mode MIS-FET, the addition of gate dielectric creates a new dielectric/III–N interface that presents a grand challenge in that there typically exist high-density (1012–1014 cm−2eV−1) shallow and deep traps (with short and long emission time constants τit) at the interface [22].”