Effect of edge roughness in graphene nanoribbon transistors

By Youngki Yoon, Jing Guo. 2007

169 citations recorded by the source corpus.

The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the non-equilibrium Green's function formalism. The minimal leakage current increases due to the localized states induced in the band gap, and the on-current decreases due to smaller quantum transmission and the self-consistent electrostatic effect in general. Although the ratio between the on-current and minimal leakage current decreases, the transistor still switches even in the presence of edge roughness. The variation between devices, however, can be large, especially for a short channel length.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/af26238c9673ac633589ef72cc9e0361e7eb42a6

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Frank Schwierz
2. Gianluca Fiori
3. Jing Guo
4. G. Iannaccone
5. Youngki Yoon
6. Y. Ouyang

In Materials Chemistry

1. Frank Schwierz
2. Jing Guo
3. Youngki Yoon
4. Gianluca Fiori
5. G. Iannaccone
6. Leitao Liu
7. Seokmin Hong
8. Y. Ouyang

Citations in the corpus

• Graphene Transistors: Status, Prospects, and Problems (2013, background): “Finally, simulations have shown that edge effects lead to huge differences in the characteristics of GNR MOSFETs with identical design but slightly different edge configurations, significantly reduced Ion, increased Ioff , and consequently seriously degraded on–off ratios [130], [135], [136].”
• Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors (2011, result): “result in a significant reduction of carrier mobility [3], [4], loss of coherence [5], and increased OFF-current [6] compared to”
• Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs (2008, background): “State-of-the-art etching techniques are for instance far from atomistic resolution so that edge roughness can play an important role on device performance [22, 23].”
• Single-layer MoS2 transistors. (2011, unknown): “or increased off-state currents due to edge roughnes”