Degenerate n-doping of few-layer transition metal dichalcogenides by potassium.

By H. Fang, M. Tosun, Gyungseon Seol, T. Chang, K. Takei, Jing Guo, Ali Javey. Nano letters (Print), 2013

729 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d6a5ce11ace88fc905a1ff767a77554336503e98

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In Electrical and Electronic Engineering

1. A. Di Bartolomeo
2. A. Neal
3. Roya Maboudian
4. Peide D. Ye
5. Filippo Giubileo
6. Sanjay Kumar Banerjee
7. Di Xiao
8. Jing Guo

In Materials Chemistry

1. Jing Guo
2. A. Di Bartolomeo
3. Filippo Giubileo
4. Mauricio Terrones
5. A. Neal
6. Peide D. Ye
7. Steven G. Louie
8. H. Terrones

Citations in the corpus

• Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, methodology): “Although successful electron doping, and an improvement in the MoS2 FET performance (by reduction of the sheet/contact/access resistances), was achieved using these techniques, the doping reagents used were unstable under ambient conditions and, hence, practically unfeasible [209,210].”
• Phosphorene: an unexplored 2D semiconductor with a high hole mobility. (2014, background): “using gas adsorption, which is not easily practicable for solid-state device applications.(4,36) The observed linear I V relationship at low drain bias is indicative of good contact properties at the metal/phosphorene inter-”