Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study

By Y. Ouyang, Youngki Yoon, Jing Guo. IEEE Transactions on Electron Devices, 2007

155 citations recorded by the source corpus.

The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by self-consistently solving the nonequilibrium Green's function transport equation in an atomistic basis set with a 3-D Poisson equation. The armchair edge GNR channel shares similarities with a zigzag carbon nanotube; however, it has a different geometry and quantum confinement boundary condition in the transverse direction. The results indicate that the I-V characteristics are ambipolar and strongly depend on the GNR width because the bandgap of the GNR is approximately inversely proportional to its width, which agrees with recent experiments. A multiple gate geometry improves immunity to short channel effects; however, it offers smaller improvement than it does for Si MOSFETs in terms of the on-current and transconductance. Reducing the oxide thickness is more useful for improving transistor performance than using a high-k gate insulator. Significant increase of the minimal leakage current is observed when the channel length is scaled below 10 nm because the small effective mass facilitates strong source-drain tunneling. The GNRFET, therefore, does not promise to extend the ultimate scaling limit of Si MOSFETs. The intrinsic switching speed of a GNR SBFET, however, is several times faster than that of Si MOSFETs, which could lead to promising high-speed electronics applications, where the large leakage of GNR SBFETs is of less concern.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c6da7cbf7ccfe70a30869e4a59e4b44ebedd55b4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Youngki Yoon
2. Gianluca Fiori
3. G. Iannaccone
4. Seokmin Hong
5. Jing Guo
6. A. Mahmood
7. C. Soldano
8. E. Dujardin

In Materials Chemistry

1. Jing Guo
2. Youngki Yoon
3. Gianluca Fiori
4. G. Iannaccone
5. Seokmin Hong
6. Jing Kong
7. A. Mahmood
8. C. Soldano

Citations in the corpus

• Graphene Frequency Multipliers (2009, background): “[8], [9], [12]–[15] closely resembles that of an ideal full-wave rectifier [16] [Fig.”
• Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs (2008, methodology): “NEGF formalism [24] self-consistently with 3D Poisson equation [ 18-21 ].”
• Production, properties and potential of graphene (2010, background): “Therefore the minimal leakage current should significantly increase below 10 nm so that graphene FET might not allow to extend the ultimate scaling limit of Si MOSFETs.”