Theory of ballistic nanotransistors

By Anisur Rahman, Jing Guo, Supriyo Datta, Mark S. Lundstrom. 2003

751 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0311be8f91032416647803de4f1a7af8f4fa4607

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In Biomedical Engineering

In Electrical and Electronic Engineering

Citations in the corpus

On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors (2004, methodology): “In previous paper, this model was used to evaluate the – characteristics of ballistic Si MOSFETs [13] and HEMTs [14] with parabolic energy bands and Ge MOSFETs with numerical - relations [15].”
Toward Nanowire Electronics (2008, background): “The tunneling probability in WKB approximation becomes energy independent if one approximates the sourcechannel n-p junction with a triangular potential barrier as shown with the hatched area in Fig.”
Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study (2007, background): “For a transistor that operates at the quantum capacitance limit (in which the gate insulator capacitance is much larger than the semiconductor capacitance of the channel) [16], [17], the total gate capacitance is limited by the semiconductor capacitance and is independent of the gate insulator capac”
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors (2011, methodology): “Detailed derivations of this model are described in [27].”
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors (2003, background): “mV/dec because of short channel electrostatics and the parasitic capacitance between the source-drain contact and the channel that is large [21]).”
Nanowire Transistor Performance Limits and Applications (2008, methodology): “Analysis of the transport behavior of Ge/Si nanowire FETs using a semiclassical ballistic transport model coupled with a sp3d5s∗ tight-binding model to describe the electronic structure of Ge NW core [70], [89], [90] demonstrates that the calculated and experimental Id–Vgs transfer characteristics [”
Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers (2004, methodology): “The BTE has also been used, along with related concepts such as density-of-states and conduction effective masses, in order to explore the upper limit of nanoscale MOSFET performance [14-16].”
Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors (2007, methodology): “Next, we use the calculated dispersion relations to calculate the ballistic I–V characteristics of n-channel CNR MOSFETs using a semiclassical “top-ofthe-barrier” MOSFET model [15].”