Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

By Ali Javey, Jing Guo, D. Farmer, Qian Wang, Dunwei Wang, R. Gordon, Mark S. Lundstrom, Hongjie Dai. Nano letters (Print), 2003

489 citations recorded by the source corpus.

High-performance enhancement-mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high-dielectric-constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents and subthreshold swings of 70-80 mV/decade and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scaling. This presents an important advantage over devices with a metal source/drain, or devices commonly referred to as Schottky barrier FETs.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/46c4a21a612151bfeb1bbc8b028610ec826a8a04

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In Materials Chemistry

Citations in the corpus

Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors. (2007, methodology): “We are currently investigating alternative approaches to further optimize device performance, including the use of high- κ dielectric”
Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes (2009, background): “At the 32 nm technology node, CNFETs circuits show 13× energy delay product improvement [2]–[4] over 32 nm silicon CMOS due to near-ballistic CNT transport [5]–[ 7 ].”
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Circuit-Level Performance Benchmarking and Scalability Analysis of Carbon Nanotube Transistor Circuits (2009, methodology): “At the 32 nm node, CNFETs show 13× CV/I improvement [1] over bulk n-type MOSFETs due to near-ballistic CNT transport [ 5 ].”
Transition metal adatoms on graphene: A systematic density functional study (2015, background): “considerable interest in the fields of molecular sensing [14-16], hydrogen storage [17-19], transistors [20], catalysis [21-23], metal nanowire synthesis [24], and nanoelectronics [25].”
Carbon Nanotube Electronics and Optoelectronics (2004, background): “Controlled doping of the contacts [ 22 ] or new device designs [23, 39, 40] may provide a different route to enhanced performance of CNFETs.”
A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking (2007, background): “ALLISTIC or near-ballistic transport is observed with intrinsic carbon nanotube (CNT) under low voltage bias because of the ultralong (∼1 µm) scattering mean free path (MFP) [ 2 ]–[5].”