A computational study of thin-body, double-gate, Schottky barrier MOSFETs

By Jing Guo, Mark S. Lundstrom. 2002

175 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/bba6aa9d2bf349a415cd39a6c674adc5d79f56f6

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Jing Guo
2. Mark S. Lundstrom
3. Anisur Rahman
4. Supriyo Datta
5. Youngki Yoon
6. J. Larson
7. John P. Snyder
8. Gianluca Fiori

In Electrical and Electronic Engineering

1. Mark S. Lundstrom
2. Anisur Rahman
3. Jing Guo
4. G. Iannaccone
5. Gianluca Fiori
6. Supriyo Datta
7. Youngki Yoon
8. J. Larson

Citations in the corpus

• Overview and status of metal S/D Schottky-barrier MOSFET technology (2006, result): “Some have claimed a zero or even negative barrier height is required for acceptable performance [ 60 ], while other results suggest that very high”
• Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs (2008, result): “This observation agrees to a conclusion in a previous literature that the on current of a ballistic SBFET with positive Schottky barrier height is smaller than that of a ballistic MOSFET due to the tunneling barrier at the source end of the channel [25].”
• Ballistic carbon nanotube field-effect transistors (2003, background): “A key goal in transistor scaling is to maximize the saturation drain current for short channel and low voltage device”
• Theory of ballistic nanotransistors (2003, methodology): “DEVICE PHYSICS OF BALLISTIC MOSFETS Numerical simulations provide detailed information on the operation of nanoscale devices.”