Anisur Rahman
Polymers and Plastics · Journal of reinforced plastics and composites · 2002–2019
A researcher in the Science corpus: 6 papers; trusts 11 researchers and is trusted by 5 researchers here, as inferred from the citation graph.
Subfields
- Polymers and Plastics — 58 citations into it
- Mechanical Engineering — 35 citations into it
- Electrical and Electronic Engineering — 33 citations into it; #6,641 of 16,539 by trust here, #7,770 by citations
- Mechanics of Materials — 16 citations into it
- Atomic and Molecular Physics, and Optics — 13 citations into it
- Biomedical Engineering — 11 citations into it; #4,241 of 10,734 by trust here, #6,312 by citations
Whom Anisur Rahman trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Mark S. Lundstrom
- Zhibin Ren
- Supriyo Datta
- Jing Guo
- R. Venugopal
- C. Baley
- Sebastien Goasguen
- Ali Javey
- E. Muñoz
- M. Anantram
Who trusts Anisur Rahman overall
- Mark S. Lundstrom
- Neophytos Neophytou
- Wei Dang Lu
- Leitao Liu
- Jing Wang
- Jing Guo
- Avik W. Ghosh
- Y. Ouyang
- Ping Xie
- Supriyo Datta
Papers from Anisur Rahman's perspective
Ordered by how strongly the researchers Anisur Rahman trusts endorse each paper. Same corpus, a different order for every researcher.
- On the performance limits for Si MOSFETs: a theoretical study
- A simple quantum mechanical treatment of scattering in nanoscale transistors
- Carbon nanotubes as schottky barrier transistors. (Physical Review Letters)
- A computational study of thin-body, double-gate, Schottky barrier MOSFETs
- Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
- Theory of ballistic nanotransistors
- On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit? (IEEE Electron Device Letters)
- High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
- Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))
- nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs
Their papers
- Theory of ballistic nanotransistors (2003) — 751 citations
- On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors (2004) — 155 citations
- A compact scattering model for the nanoscale double-gate MOSFET (2002) — 199 citations
- Environmental effects on the durability and the mechanical performance of flax fiber/bio-epoxy composites (2019) — 164 citations
- Flax fiber and its composites: An overview of water and moisture absorption impact on their performance (2018) — 206 citations
- Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers (2004) — 159 citations