High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation

By Jiangbin Wu, Hung-Yu Chen, Ning Yang, Jun Cao, Xiaodong Yan, Fanxin Liu, Qibin Sun, X. Ling, Jing Guo, Han Wang. 2020

279 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d985bf3588f1872354fbd01bf2bf0a2e74cbc0e0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Abu Sebastian
2. M. Le Gallo
3. Wei Dang Lu
4. Meilin Liu
5. Husam N. Alshareef
6. Zhongrui Wang

In Materials Chemistry

1. Wei Dang Lu
2. Abu Sebastian
3. Meilin Liu
4. Deji Akinwande
5. Husam N. Alshareef
6. M. Le Gallo
7. S. Jiang

Citations in the corpus

• Memristive technologies for data storage, computation, encryption, and radio-frequency communication (2022, methodology): “A feasible alternative would be the use of CMOS-compatible van der Waals ferroelectric materials such as CuInP 2 S 6 , which may enable this value to increase to >10 7 ( 123 ).”
• In-sensor reservoir computing for language learning via two-dimensional memristors (2021, background): “We note that in other 2D systems apart from certain 2D heterostructures or hybrid materials systems ( 35 – 45 ), either facilitation or depression dominates the transport, limiting the complexity and multiple-mode operation of optoelectronic RC.”