Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.

By Xinran Wang, Y. Ouyang, Xiaolin Li, Hailiang Wang, Jing Guo, Hongjie Dai. Physical Review Letters, 2008

1,267 citations recorded by the source corpus.

Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10(6) and on-state current density as high as approximately 2000 microA/microm. We estimated carrier mobility approximately 200 cm2/V s and scattering mean free path approximately 10 nm in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter (d< or = approximately 1.2 nm) carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/edcc508ac3f0c3c931dd3930ba3516690d777bf8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Materials Chemistry

Citations in the corpus

Sub-10 nm fabrication: methods and applications (2021, methodology): “(c) Reprinted figure with permission from [246].”
Energy dissipation and transport in nanoscale devices (2010, background): “Care must also be taken with the limiting cases W ≫ tox (1-dimensional heat flow through underlying oxide) as opposed to d or W ≪ tox (3dimensional spreading into oxide), the latter being the case for all nanotube, nanowire, and even graphene nanoribbon data [90] typically available.”