Thermochemical description of dielectric breakdown in high dielectric constant materials

By J. McPherson, J. Kim, A. Shanware, H. Mogul. 2003

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Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching (2015, methodology): “2 eÅ [15] and k = 21 are the HfO2 molecular dipole moment [39] and relative dielectric constant, respectively.”
Grain boundary-driven leakage path formation in HfO2 dielectrics (2011, methodology): “2 e·cm, was estimated in [5], we extracted the intrinsic activation energy Et, Fig.”
Fundamentals, processes and applications of high-permittivity polymer–matrix composites (2012, background): “Interestingly, such a trend is often found to provide a satisfying fit to experimental data [87].”
Dielectric properties of Poly(vinylidene fluoride)/ CaCu3Ti4O12 nanocrystal composite thick films (2010, positive): “When the breakdown strength is plotted against the dielectric permittivity, an inverse relationship of breakdown voltage to dielectric permittivity is evident [44].”
On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, background): “25 nm being the lattice constant (also the mesh size), and γ being the enhancement coefficient related to the local dielectric constant of the material [37].”
A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations (2012, background): “γ is the local enhancement factor which takes into account the polarizability of the material [6] and the nonuniform potential distribution in the cell.”