Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

By Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, Mitsuteru Iijima and 15 more. 2008 IEEE International Electron Devices Meeting, 2008

319 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/9a3ae2a81c9c0db9ca2bbce44e58fc856a86c595

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Citations in the corpus

An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput (2012, methodology): “Index Terms—ReRAM, multi-layer, cross-point, resistive memory element, bidirectional diode, short bitline structure, multi-bit write architecture, write dummy cell, error check and correct, write throughput.”
A review of emerging non-volatile memory (NVM) technologies and applications (2016, background): “Recent focus is shifting to materials with more stable switching behaviors ( e.g. , TaO x [26]) and multi-oxide stack with multiple optimization knobs ( e.g. , oxide compositions, interfaces [27]).”
On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy (2012, background): “Among dozens of switching oxide materials, NiO- [4], WOx- [5], HfOx- [6], [7], TaOx- [8], [9], and AlOx [10]-based memory devices have shown excellent reliability, including long endurance and stable retention at elevated temperature.”
State Dynamics and Modeling of Tantalum Oxide Memristors (2013, methodology): “Time scales <1 μs are probed with a highspeed setup [8], [9] in which Rsource = Rscope = 50 , while longer time scales use a pulsed parameter analyzer in which Rsource and Rscope are negligible.”
On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, background): “Among dozens of switching oxide materials, NiO [4], WOx [5], HfOx [6], [7], TaOx [8], [9], and AlOx [10]-based memory devices have shown excellent reliability, including long endurance and stable retention at elevated temperature.”
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. (2011, background): “Previously the best reported value was 10 10 switching cycle”
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, background): “Under the circumstances, the resistive switching memory which based on resistance change modulated by electrical stimulus, has inspired both scientific and commercial interest due to its excellent area compaction (4F2, where F is minimal feature size), high switching speed (<100 ps) [3], high endura”