Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

390 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, methodology): “The Schottky or thermionic emission happens when thermally-activated electrons injected over the energy barrier into the conduction band of the oxide as shown in Figure 4 [55].”
On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, methodology): “The electronic part involved in the operation of the cell has been discussed in an experimental work in [23] and [24], which concludes that the TAT through the Vo is the dominant conduction mechanism in the cell.”