Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance
By Heng-Yuan Lee, Yu-Hsiu Chen, P. S. Chen, P. Gu, Y. Hsu, S. M. Wang, W. H. Liu, C. Tsai, S. Sheu, P. Chiang and 6 more. International Electron Devices Meeting, 2010
271 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/10146dfeffa2be4267525ae74fda5c644205f497
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In Electrical and Electronic Engineering
- Shimeng Yu
- Daniele Ielmini
- H. Philip Wong
- Ximeng Guan
- Duygu Kuzum
- John Paul Strachan
- Yuan Xie
- Feng Miao
In Materials Chemistry
- H. Philip Wong
- Shimeng Yu
- Ximeng Guan
- Daniele Ielmini
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- Alexander A. Balandin
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Citations in the corpus
- State Dynamics and Modeling of Tantalum Oxide Memristors (2013, background): “Although high-voltage electroforming [5]–[7] is eliminated in this structure, the first ON-switching voltage is higher than average (Fig.”
- Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, background): “The Me is usually a transition metal, such as Hf [22, 26], Ta [23, 25], Ti [59], or many others.”
- On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, background): “In Part II of the paper [14], we corroborate the simulation results with the experimental data of HfOx-based RRAM devices [15], [16], such as dc I–”
- An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation (2011, methodology): “Among the metal oxide materials, HfOx-based devices have shown excellent performance such as fast switching speed, excellent switching endurance, and reliable data retention [ 27 ].”
- On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy (2012, background): “For example, a chemical–mechanical polish was adopted to smooth the bottom electrode and improve the uniformity HfOx-based RRAM devices in an array [6].”
- Overcoming the challenges of crossbar resistive memory architectures (2015, methodology): “We extract the device parameters from HfOx-based cells [20] and selector parameters from IBM’s MIEC device [4].”