On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

By Shimeng Yu, Ximeng Guan, H. Philip Wong. IEEE Transactions on Electron Devices, 2012

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Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, methodology): “KMC models for calculating I–V characteristics and the associated fluctuations [88].”
On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, methodology): “In Part II of the paper [14], we corroborate the simulation results with the experimental data of HfOx-based RRAM devices [15], [16], such as dc I–V switching characteristics and pulse transient switching waveform, multilevel resistance distribution, etc.”
A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations (2012, methodology): “The typical dc and pulse measurements of RRAM show a temporal fluctuation of the current during the RESET process [7].”
Stochastic Memristive Devices for Computing and Neuromorphic Applications (2013, background): “However, a major roadblock that needs to be overcome before potential commercialization of these devices is the potentially large variations in the switching parameters (12,13).”