A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

By Shimeng Yu, H. Philip Wong. IEEE Electron Device Letters, 2010

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An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation (2011, background): “Owing to the exponential voltage–time relationship [38] in the switching dynamics, it was found that linearly varying”
Emerging Memory Technologies: Recent Trends and Prospects (2016, unknown): “The switching of RRAM includes unipolar and bipolar modes depending on the oxide and electrode materials system [19].”
Overcoming the challenges of crossbar resistive memory architectures (2015, background): “A critical characteristic of an ReRAM cell is that its switching time is inversely exponentially related to the voltage applied on the cell [10, 54].”
Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) (2011, background): “However, measurements of the fast metal ion diffusivity in CBRAM devices [37] reveal that the switching time is limited by the time for ion migration through the solid electrolyte rather than the electrochemical reaction time for the ions to be”
On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, background): “The RESET of the device is associated with the process in which the oxygen ions from the anode/dielectric interface migrate back into the dielectric layer, recombining with the oxygen vacancies (or equivalently, oxidizing the metal precipitates) and thus rupturing the conducting filaments [20], [21]”