On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization

By Shimeng Yu, Ximeng Guan, H. Philip Wong. International Electron Devices Meeting, 2011

213 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c5239ed6ea3cf264954769c46d5389b3eb1dbc19

How researchers see this paper

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In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Federico Nardi
3. David C. Gilmer
4. Simone Balatti
5. S. Larentis
6. Hyunsang Hwang
7. Shimeng Yu
8. Rainer Waser

Citations in the corpus

• Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems (2016, background): “8 V were fixed on account of the voltage–time relationship involved in the oxygen migration [11].”
• Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, unknown): “, stochastic model [107] and Kinetic Monte Carlo (KMC) model [108], further corroborated the TAT as dominant conduction mechanism.”
• Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012, methodology): “We preferred PF transport instead of tunneling or trapassisted tunneling conduction [17], given the relatively low energy barriers (below 100 meV) for conduction.”