A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

By Ximeng Guan, Shimeng Yu, H. Philip Wong. IEEE Electron Device Letters, 2012

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A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations (2013, background): “So far, much works have been done for modeling the switching behavior of metal–oxide-based RRAM [11]–[14] and some SPICE models based on the subcircuits have been presented to describe the features of a single device [15]–[17].”
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications (2020, methodology): “The variation in the gap size δg depends on kinetic energy of ions and filament temperature as [130]:”
State Dynamics and Modeling of Tantalum Oxide Memristors (2013, methodology): “Subsequently, other compact resistance switching device models were developed and applied in several cases [16]–[23].”
Hardware implementation of memristor-based artificial neural networks (2024, unknown): “Note that for other memristive models the state variable would be calculated following a different equation (for instance in the Stanford model 270 ).”
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, background): “Compact modeling of resistive switching memory often consists of three inter-related modules, namely: (i) evolution of CF; (ii) conduction mechanism; and (iii) temperature dynamic evolution [15–18].”