Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

By Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, P. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Hsu, S. Sheu, P. Chiang and 4 more. International Electron Devices Meeting, 2009

204 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4bd921f38965faf21f4824589c3ad3aabe838cad

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In Electrical and Electronic Engineering

Citations in the corpus

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM (2010, background): “It is noted that some abnormal unipolar reset may happen for some bipolar systems such as TiN/Ti/HfO2/TiN [16] under some extreme programming conditions.”
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications (2020, methodology): “Fang Z, Yu H, Liu W, Wang Z, Tran X, Gao B, et al. (2010) Temperature instability of resistive switching on HfOx-based RRAM devices.”
Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance (2010, methodology): “Introduction Owning to highly scalability and process compatibility with CMOS technology, the HfOX based bipolar resistive memory is a promising candidate for the next generation nonvolatile memory (NVM) [1-4].”
On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, background): “A large memory array usually contains noticeable tail bits in the resistance distribution [12], which remarkably reduces the resistance window and therefore imposes a great challenge to realizing the multilevel capability of the metal–oxide RRAM technology.”
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching (2015, background): “Among the variety of technologies and materials proposed so far, the RRAM devices based on hafnium oxide showed very promising characteristics: short switching times (∼1 ns), good endurance (>1012) and retention, compatibility to the CMOS manufacturing process, and a very simple structure [1], [2].”
NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory (2012, background): “An ReRAM cell consists of a metal oxide layer (e.g., Ti [4], Ta [5], and Hf [6]) sandwiched by two metal (e.g., Pt [4]) electrodes.”
On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy (2012, background): “A large memory array usually contains noticeable tail bits in the resistance distribution [12], which remarkably”