Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

By I. Baek, Moon-sook Lee, S.H. Seo, Myoung‐Jae Lee, D. Seo, D.-S. Suh, Jong-Il Park, S. O. Park, Hyun-suk Kim, I. Yoo and 2 more. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004

537 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/33ca2a8ce7dc9211534c9d6856636c7f8cf054eb

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Citations in the corpus

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ (2008, background): “seem to be applicable for ReRAM, including ferromagnetic materials [1], perovskite oxide [2], [3], polymer [4], and binary transition-metal oxides [5]–[14].”
On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy (2012, background): “Among dozens of switching oxide materials, NiO- [4], WOx- [5], HfOx- [6], [7], TaOx- [8], [9], and AlOx [10]-based memory devices have shown excellent reliability, including long endurance and stable retention at elevated temperature.”
A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte (2006, unknown): “[10] used such models to describe the unipolar switching characteristics of their transition metal oxide-based”
Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (2009, methodology): “Several physical interpretations for the switching processes have been proposed, including trap charging in the dielectric [5], space-charge-limited conduction processes [16], ion conduction and electrodeposition [7], [13], Mott transition [17], and Joule heating [6].”
On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, background): “Among dozens of switching oxide materials, NiO [4], WOx [5], HfOx [6], [7], TaOx [8], [9], and AlOx [10]-based memory devices have shown excellent reliability, including long endurance and stable retention at elevated temperature.”
Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications (2005, background): “operation, high density integration, high-speed operations, and compatibility of current CMOS process [4]–[6].”