On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
By Ximeng Guan, Shimeng Yu, H. Philip Wong. IEEE Transactions on Electron Devices, 2012
327 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/9c2fc6730b0a040149033e93c9c031e5257b7358
How researchers see this paper
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In Electrical and Electronic Engineering
- Daniele Ielmini
- H. Philip Wong
- Shimeng Yu
- Ximeng Guan
- Razali Ismail
- Ee Wah Lim
- Pai-Yu Chen
- Ilia Valov
Citations in the corpus
- A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations (2013, background): “The generation probability (Pg) of Vo under electric field during dt is governed by the following equation [12]:”
- Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, methodology): “Increasing the compliance current results in more defects being generated in the insulating layer, thus causing the presence of more parallel CFs [84].”
- On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy (2012, methodology): “tunneling gap distance, as explained in Part I of the paper [14].”