An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

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Spin-transfer torque magnetic memory as a stochastic memristive synapse (2014, neutral): “devices to implement STDP [9], [11]–[14], [44], [53]–[57],”
Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension (2018, background): “n electrode. It involves the repeated deposition of metal thin film, contact and isolation layer on the sidewall of a silicon oxide trench (1-4), planarization and polishing to expose the metal edges (5) and bonding of two nanofin chips with switching layer sandwiched in between (6). A step-by-step ”
Artificial synapse network on inorganic proton conductor for neuromorphic systems (2013, background): “[5] Recently, resistive switching memory, memristors or atomic switch have been investigated in biologically inspired neuromorphic circuits.[6-11] Important synaptic learning rules such as spike-timing dependent plasticity (STDP) and short-term memory to long-term memory transition have been demonst”
On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy (2012, result): “part II of the paper (the current paper), we corroborate the simulation results with the experimental data of HfOx-based RRAM devices [15], [16], such as the dc I–V switching characteristics”