Tun Zainal Azni Zulkifli
Electrical and Electronic Engineering · 2020
A researcher in the Science corpus: 1 paper; trusts 4 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 41 citations into it
- Polymers and Plastics — 7 citations into it
Whom Tun Zainal Azni Zulkifli trusts overall
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Papers from Tun Zainal Azni Zulkifli's perspective
Ordered by how strongly the researchers Tun Zainal Azni Zulkifli trusts endorse each paper. Same corpus, a different order for every researcher.
- Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
- Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM (2008 IEEE International Electron Devices Meeting)
- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
- Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity (International Electron Devices Meeting)
- Phase change memory technology
- 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation (International Electron Devices Meeting)
- Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices (IEEE Transactions on Electron Devices)
- A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations (IEEE Electron Device Letters)
- Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices (IEEE Electron Device Letters)
- Nonvolatile resistive switching memories-characteristics, mechanisms and challenges