Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

By S. Rafique, Lu Han, A. Neal, S. Mou, Marko J. Tadjer, Roger H. French, Hongping Zhao. 2016

136 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/2226bc656c3c0de368bf4e2e4078c5abb8f1baec

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Citations in the corpus

• Review of gallium-oxide-based solar-blind ultraviolet photodetectors (2019, background): “To meet the high demand for power electronic device applications, great efforts have been made on the epitaxial growth of Ga2O3 thin films in recent years by various technological means, including molecular beam epitaxy (MBE) [25,171,172], metal– organic vapor phase epitaxy (MOVPE) [145,173], halide”