Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
By S. Rafique, Lu Han, Marko J. Tadjer, J. Freitas, N. Mahadik, Hongping Zhao. 2016
195 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/81b6f49412ef2a20e54fe7b823bc324dc0b6e02f
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Citations in the corpus
- Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications (2020, background): “In recent years, many growth methods of Ga2O3 thin film have been developed, such as radio-frequency magnetron sputtering (RFMS) [88–91], pulsed laser deposition (PLD) [92–95], molecular beam epitaxy (MBE) [33, 40, 96– 98], metal-organic chemical vapor deposition (MOCVD) [99, 100], low pressure chem”
- Review of gallium-oxide-based solar-blind ultraviolet photodetectors (2019, background): “To meet the high demand for power electronic device applications, great efforts have been made on the epitaxial growth of Ga2O3 thin films in recent years by various technological means, including molecular beam epitaxy (MBE) [25,171,172], metal– organic vapor phase epitaxy (MOVPE) [145,173], halide”