Edward A. Jones Jr.

Electrical and Electronic Engineering · 2014–2016

A researcher in the Science corpus: 2 papers; trusts 4 researchers and is trusted by 4 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 20 citations into it; #8,661 of 16,539 by trust here, #10,714 by citations
• Condensed Matter Physics — 19 citations into it; #997 of 1,948 by trust here, #1,069 by citations
• Electronic, Optical and Magnetic Materials — 7 citations into it; #2,179 of 2,886 by trust here, #2,777 by citations

Whom Edward A. Jones Jr. trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Tohru Oka
2. T. Nozawa
3. Burak Ozpineci
4. Fred Wang

Who trusts Edward A. Jones Jr. overall

1. Boyi Zhang
2. Shuo Wang
3. Fei Fred Wang
4. Jin Wei

Papers from Edward A. Jones Jr.'s perspective

Ordered by how strongly the researchers Edward A. Jones Jr. trusts endorse each paper. Same corpus, a different order for every researcher.

1. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (IEEE Electron Device Letters)
2. Evaluation and Application of 600 V GaN HEMT in Cascode Structure (IEEE transactions on power electronics)
3. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance (IEEE Electron Device Letters)
4. Evaluation of the switching characteristics of a gallium-nitride transistor (2011 IEEE Energy Conversion Congress and Exposition)
5. Vertical Power p-n Diodes Based on Bulk GaN (IEEE Transactions on Electron Devices)
6. Wide-Bandgap-Based Power Devices: Reshaping the power electronics landscape (IEEE Power Electronics Magazine)
7. Application-based review of GaN HFETs (IEEE Workshop on Wide Bandgap Power Devices and Applications)
8. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications (IEEE Transactions on Electron Devices)
9. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation (IEEE Transactions on Electron Devices)
10. Accurate dependence of gallium nitride thermal conductivity on dislocation density

Their papers

• Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges (2016) — 1,025 citations
• Application-based review of GaN HFETs (2014) — 146 citations