1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

By Tohru Oka, T. Ina, Y. Ueno, J. Nishii. 2015

221 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/7216729c5558262a65b1eaada4d70ce2501e7ec9