Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

By Tohru Oka, Y. Ueno, T. Ina, Kazuya Hasegawa. 2014

159 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/135b5a313c5f1fbebb3d9ed17f135b5ce7c0095f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Yuhao Zhang
3. Matteo Meneghini
4. Tomás Palacios
5. Enrico Zanoni
6. Michael J. Uren
7. Martin Kuball
8. Kevin J. Chen

In Electrical and Electronic Engineering

1. Yuhao Zhang
2. Tomás Palacios
3. Matteo Meneghini
4. Michael J. Uren
5. Gaudenzio Meneghesso
6. Enrico Zanoni
7. Martin Kuball
8. Kevin J. Chen

In Electronic, Optical and Magnetic Materials

1. Tomás Palacios
2. Matteo Meneghini
3. Kevin J. Chen
4. Enrico Zanoni
5. Gaudenzio Meneghesso
6. Min-Chul Sun
7. Nadim Chowdhury
8. Jie Hu

Citations in the corpus

• The 2018 GaN power electronics roadmap (2018, background): “Further work is needed for all the three channels reported so far, 2DEG channel [53], MOS inversion layer [55] and bulk fin channel [56].”