Recent development of vertical GaN power devices

By Tohru Oka. Japanese Journal of Applied Physics, 2019

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Gallium nitride (GaN) is an attractive material for high-frequency and high-power devices. Due to the availability of relatively high-quality free-standing bulk GaN substrates, the research and development of vertical GaN devices on GaN substrates has made significant progress in recent years, and various transistors and diodes based on vertical GaN with excellent characteristics have been reported. This paper reviews the current status and recent progress of vertical GaN power device development reported from companies and research institutions, which includes the technological development of our recent research results of Schottky barrier diodes and trench MOSFETs. Key remaining issues for practical applications are also described.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/f8bd9ddab04f2a2b50f423c2d7c67440c0620cdb