GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
By M. Kodama, M. Sugimoto, E. Hayashi, N. Soejima, O. Ishiguro, M. Kanechika, K. Itoh, H. Ueda, T. Uesugi, Tetsu Kachi. 2008
195 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/55decd497f77e8488e4203795bc8a9c7a28a4275
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Materials and processing issues in vertical GaN power electronics (2017, methodology): “To avoid the contamination from alkaline metal, TMAH-based wet clean was used to achieve smooth non-polar (1100) plane [51].”
- AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (2008, background): “Consequently, the GaN-based MIS-gate structure allows us to attain a positive threshold voltage like that of GaN MISFETs [17]–[20].”