AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

By Tohru Oka, T. Nozawa. IEEE Electron Device Letters, 2008

363 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/6fee4d114dcda84687ecaf1255c113c8de4b2500

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Citations in the corpus

VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (2018, methodology): “Among several approaches implemented to achieve normally-OFF operation [2]–[6], the p-type gate solution has dominated the scene of commercialization because of the good balance among performance, reliability, and cost.”
600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse (2013, methodology): “However, only a few results on large gate swing in GaN normally-OFF devices have been reported [3]–[5].”
Application-based review of GaN HFETs (2014, methodology): “Sharp [10] Hybrid MOS-HFET, insulated 400 V 200 mA/mm * -5.”
Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate (2010, methodology): “Various technologies for developing normally off devices which utilize a Schottky junction gate [4]‐[6] or a MOS gate structure [ 7 ]‐[12] have been investigated.”
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, methodology): “Ever since the initial demonstration of the enhancement-mode AlGaN/GaN HEMT in 1996 [36] and furthermore in 2000 [37], several approaches have been used to make normally-OFF GaN-based HEMTs as reviewed previously [38] and more recently [8,39].”
GaN on Si Technologies for Power Switching Devices (2013, background): “semiconductor devices enable high current with normally-off operations, there should remain reliability issues owing to the unstable interface between the GaN and the insulator [24], [25].”
Tri-Gate Normally-Off GaN Power MISFET (2012, background): “First of all, low on-resistance (Ron) is difficult to achieve with the conventional normally-off GaN technologies, such as plasma treatment [2]–[5] and gate recess [6]–[8] which degrade channel mobility.”
High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique (2013, background): “Thus, for power switch applications, it is necessary to combine gate dielectric with gate recess to further scale up the threshold voltage (Vth) and gate swing [5], [6].”
GaN Power Transistors on Si Substrates for Switching Applications (2010, background): “RPI and Furukawa group [21] or Sharp group [22] have demonstrated a Bhybrid MOS-HEMT or MIS-HEMT structure,[ which was etched off the AlGaN layers under the gate electrode through GaN channel layers.”