Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

By Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, Tsuyoshi Tanaka, D. Ueda. IEEE Transactions on Electron Devices, 2007

891 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a910e9d8090c4b9824a4da99e47e973f5a6f68ac

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Citations in the corpus

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance (2011, background): “OWING to the excellent material properties such as high electron mobility and high breakdown field, GaN-based semiconductors are well suited for next-generation powerswitching devices [1]–[6].”
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (2008, methodology): “Several techniques for the normally-off operation of the AlGaN/GaN HFETs have been reported so far, such as using a thin AlGaN barrier layer [5]–[7], a recessed gate structure [8], [9], a fluoride-based plasma treatment [10], [11], a p-type gate structure [12]–[14], and using a nonpolar a-plane chan”
Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs (2017, neutral): “to the formation of the 2DEG [13]–[16].”
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs (2018, background): “Charge neutrality in the GaN channel is restored by the electrons coming from the source, giving rise to conductivity modulation [2].”
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate (2017, methodology): “Gate structuring is realized by selective dry-etching of the p-GaN epitaxial layer in an early phase of the complete device process [20,22].”
Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (2015, methodology): “So far, there are several approaches to realize an enhancement mode operation, such as a recessed gate structure [1], [2], p-GaN gate [3]–[5], p-AlGaN gate [6], fluoride-based plasma treatment [7], the piezoneutralization layer [8], and floating charges [9], etc.”
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, methodology): “Besides the approaches of using the Schottky contacts, an Ohmic gate contact is suggested by Panasonic [42].”
Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “In addition, 2-D hole gases and enhancement-mode HFETs can also be implemented depending on the polarities and doping of the structures [24], [25].”
99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors (2011, methodology): “GIT used for the highly efficient inverter [ 2-4 ].”