GaN Power Transistors on Si Substrates for Switching Applications

By N. Ikeda, Y. Niiyama, H. Kambayashi, Yoshihiro Sato, T. Nomura, S. Kato, S. Yoshida. Proceedings of the IEEE, 2010

505 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2d79bea5531ea69a851e45ea75d8282f77dc6567

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Citations in the corpus

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (2013, background): “I. INTRODUCTION GALLIUM nitride (GaN)-based transistors are excellentcandidates for high-voltage, high-frequency, and highpower applications because of the superior physical properties of GaN compared to Si, SiC, and GaAs [1].”
Evaluation of the switching characteristics of a gallium-nitride transistor (2011, background): “From the works presented in [4-15], it can be seen that GaN devices are reaching the point of maturity where broader investigation of its impact on switching converters is possible and necessary [16].”
High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique (2013, background): “THE wide-bandgap AlGaN/GaN high-electron-mobility transistor (HEMT) is a promising candidate for the nextgeneration high-efficiency power switches because they could offer low switching loss and high breakdown voltage owing to the unique physical properties of GaN-based materials [1]–[3].”
Gallium nitride devices for power electronic applications (2013, background): “Several reviews of the development activity for GaN HFETs have been recently published [31, 32].”
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013, background): “GaN-based high electron mobility transistors (HEMTs) represent good candidates for next generation microwave and power electronics [1], [2].”
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges (2016, background): “If a separate thermal pad is provided in the device package, the manufacturer may recommend that the substrate be externally source-connected to help mitigate current collapse [56], [57].”
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices (2012, background): “W IDE bandgap AlGaN/GaN high-electron-mobility transistors (HEMTs) are promising candidates for highvoltage power electronics applications owing to their superior electrical characteristics, including high breakdown voltage (BV ), low on-resistance, and fast switching speed [1].”
Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems (2014, background): “For both bulk and heterojunction devices, the critical electric field is even higher than SiC; and for heterojunction devices the mobility and saturation velocity are improved with respect to SiC [34].”
Application-based review of GaN HFETs (2014, unknown): “now incorporate multiple field plates [22].”
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates (2017, background): “LATERAL power devices based on AlGaN/GaN heterostructures have achieved excellent performance in the last decade [1]–[8].”
Circuit-Oriented Treatment of Nonlinear Capacitances in Switched-Mode Power Supplies (2015, background): “Equation (1) is sufficiently accurate for simple devices [13], [14], but errant for more complex, modern devices, including superjunction devices [15] as well as varying structures of GaN [16]–[18] and SiC [19], [20] switching devices.”
Evaluation and Application of 600 V GaN HEMT in Cascode Structure (2014, background): “The material properties of GaN as well as silicon and SiC are compared in Table I [1].”
A review of GaN HEMT broadband power amplifiers (2020, unknown): “Si-based technology has several limitations as compared to the SiC-based technology especially for MMIC realizations due to the higher losses of the passive components and the lower working frequency of the active devices [187,188].”