High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
By Min-Chul Sun, Yuhao Zhang, Xiang Gao, Tomás Palacios. IEEE Electron Device Letters, 2017
207 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/e10e9c6f0d6eb7732dcee1aa2cae421fc62e5a41
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
- Gaudenzio Meneghesso
- Armin Dadgar
- Yuhao Zhang
- Matteo Meneghini
- Tomás Palacios
- Enrico Zanoni
- Michael J. Uren
- Martin Kuball
In Electrical and Electronic Engineering
- Armin Dadgar
- Yuhao Zhang
- Tomás Palacios
- Matteo Meneghini
- Michael J. Uren
- Gaudenzio Meneghesso
- Enrico Zanoni
- Martin Kuball
Citations in the corpus
- Gallium nitride vertical power devices on foreign substrates: a review and outlook (2018, methodology): “Recently, our group demonstrated a new normally-off vertical GaN power transistor by utilizing sub-micron n-GaN finshape channels [12].”
- Materials and processing issues in vertical GaN power electronics (2017, methodology): “7(d)] with excellent performance has been demonstrated [47].”
- The 2018 GaN power electronics roadmap (2018, background): “Further work is needed for all the three channels reported so far, 2DEG channel [53], MOS inversion layer [55] and bulk in channel [56].”