Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

By Yuhao Zhang, Min-Chul Sun, Zhihong Liu, Daniel Piedra, Hyung-Seok Lee, Feng Gao, T. Fujishima, Tomás Palacios. IEEE Transactions on Electron Devices, 2013

144 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/6bc7d6dc6a28b5d222da2abc5b610f7657453c3e

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Citations in the corpus

GaN-on-Si Vertical Schottky and p-n Diodes (2014, background): “GaN vertical devices have attracted increased attention recently, due to their potential for sustaining high breakdown voltage (BV ) without enlarging chip size [2], suitability to have the peak electric field away from the surface [1], and superior thermal performance [2].”
Gallium nitride vertical power devices on foreign substrates: a review and outlook (2018, methodology): “Compared to the lateral structure, a vertical power device has several advantages: (a) the capability of achieving high breakdown voltage and current levels without enlarging the chip size, (b) the superior reliability gained by moving the peak electric field away from the surface into bulk devices ”
Materials and processing issues in vertical GaN power electronics (2017, background): “spread, giving rise to a superior thermal performance than lateral GaN devices [16].”
The 2018 GaN power electronics roadmap (2018, background): “Vertical GaN power devices have attracted signiicant attention recently, due to the capability of achieving high breakdown voltage (BV) and current levels without enlarging the chip size, the superior reliability gained by moving the peak electric ield away from the surface into bulk devices, and th”
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates (2017, background): “However for high-voltage high-current applications, a vertical structure is preferred [11] because: 1) its die area does not depend on the breakdown voltage; 2) the surface is far from the high electric field regions, which minimizes trapping effects; 3) high current levels are typically possible th”
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “This can be well illustrated by a comparative thermal study of lateral and vertical GaN devices with identical material kT: superior thermal performance is revealed in vertical GaN devices due to the alleviated E-field crowding and more uniform current distributions [2].”