Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

By S. L. Selvaraj, T. Suzue, T. Egawa. IEEE Electron Device Letters, 2009

209 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/aef912905f4a0c6d415f7f37a8e6290524496db0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Yuhao Zhang
2. Tomás Palacios
3. Zhihong Liu
4. Min-Chul Sun
5. Feng Gao
6. Hyung-Seok Lee
7. Daniel Piedra
8. T. Fujishima

In Electronic, Optical and Magnetic Materials

1. Tomás Palacios
2. Min-Chul Sun
3. Yuhao Zhang
4. Daniel Piedra

In Materials Chemistry

1. Tomás Palacios

Citations in the corpus

• Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (2013, result): “This relationship and value of the slope are consistent with other reports [20], [21].”
• High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology (2010, background): “been reported to improve the device breakdown voltage beyond 800 V, including increasing the epitaxial-layer thickness [5]–”
• GaN Power Transistors on Si Substrates for Switching Applications (2010, result): “There were several other reports on Si substrates for power switching application [12], [ 13 ].”