Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

By Y. Saitoh, Kazuhide Sumiyoshi, M. Okada, Taku Horii, Tomihito Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, Takao Nakamura. 2010

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Gallium nitride vertical power devices on foreign substrates: a review and outlook (2018, methodology): “Due to relatively higher dislocation density, the highest mobility reported in GaN-on-Si (720 cm2 V−1 s−1 [28, 65]) is still lower than that in GaN-on-GaN (over 900 cm2 V−1 s−1 [8, 71]), rendering at least 20% higher drift-region Ron in vertical GaN-on-Si devices compared to GaN-on-GaN devices.”
The 2018 GaN power electronics roadmap (2018, background): “A 3.7 kV vertical GaN pn diode [49] and a 1.1 kV vertical GaN Schottky barrier diode (SBD) [50] have recently showed near-theoretical power gure of merit.”
1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon (2015, methodology): “Meanwhile, field plate technology was proven effective in boosting the breakdown voltage in both field effect transistors (FETs) [2] and SBDs [3].”