Xiang Gao

Condensed Matter Physics · IEEE Electron Device Letters · 2010–2017

A researcher in the Science corpus: 7 papers; trusts 1 researcher and is trusted by 2 researchers here, as inferred from the citation graph.

Subfields

• Condensed Matter Physics — 36 citations into it; #1,428 of 1,948 by trust here, #668 by citations
• Electronic, Optical and Magnetic Materials — 29 citations into it
• Mechanics of Materials — 5 citations into it

Whom Xiang Gao trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Jan Kuzmik
2. Dong Seup Lee

Who trusts Xiang Gao overall

1. Yuhao Zhang

Papers from Xiang Gao's perspective

Ordered by how strongly the researchers Xiang Gao trusts endorse each paper. Same corpus, a different order for every researcher.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance (IEEE Electron Device Letters)
2. High-power AlGaN/GaN HEMTs for Ka-band applications (IEEE Electron Device Letters)
3. 205-GHz (Al,In)N/GaN HEMTs (IEEE Electron Device Letters)
4. 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment (IEEE Electron Device Letters)
5. InAlN/GaN HEMTs With AlGaN Back Barriers (IEEE Electron Device Letters)
6. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance (IEEE Electron Device Letters)
7. Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance (IEEE Electron Device Letters)
8. AlGaN/GaN current aperture vertical electron transistors with regrown channels
9. Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (IEEE Transactions on Electron Devices)
10. Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs (IEEE Electron Device Letters)

Their papers

• High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates (2017) — 207 citations
• Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown (2015) — 188 citations
• 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment (2011) — 150 citations
• InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz (2012) — 320 citations
• 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier (2011) — 256 citations
• InAlN/GaN HEMTs With AlGaN Back Barriers (2011) — 164 citations
• Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance (2010) — 147 citations