High Voltage Vertical GaN p-n Diodes With Avalanche Capability

By I. Kizilyalli, A. Edwards, H. Nie, D. Disney, D. Bour. IEEE Transactions on Electron Devices, 2013

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Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage (2020, background): “to the efficient energy dissipation of accelerated electrons by higher phonon occupancy at higher temperatures [22].”
GaN-on-Si Vertical Schottky and p-n Diodes (2014, background): “Considering the relatively thin drift layer (1.5 μm) in our GaNon-Si diodes compared to that typical in the GaN-on-sapphire (4 ∼ 10 μm) and GaN-on-GaN (5 ∼ 20 μm) diodes, our 200 ∼ 300 V BV results show great potential for low-cost GaN-on-Si vertical devices to outperform GaN-on-sapphire and GaN-on-”
Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV (2015, background): “GaN p-n diodes with high breakdown voltages around 3 kV showed the Baliga’s figure of merits (FOM) by approximately one order of magnitude larger than those of SiC Schottky-barrier diodes [1]–[3].”
Gallium nitride vertical power devices on foreign substrates: a review and outlook (2018, background): “In state-of-the-art vertical GaN-on-GaN diodes [4, 8], VRH-dominant leakage can extend until the onset of avalanche breakdown when the device peak electric field reaches the avalanche field.”
Vertical Power p-n Diodes Based on Bulk GaN (2015, methodology): “but adapted for GaN using GaN specific processes [28]–[31].”