Ke Zeng

Electronic, Optical and Magnetic Materials · with Singisetti · 2018–2020

A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Ke Zeng trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Masataka Higashiwaki
  2. Kohei Sasaki

Who trusts Ke Zeng overall

  1. Hongpeng Zhang

Papers from Ke Zeng's perspective

Ordered by how strongly the researchers Ke Zeng trusts endorse each paper. Same corpus, a different order for every researcher.

  1. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
  2. Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (IEEE Electron Device Letters)
  3. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
  4. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
  5. 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (IEEE Electron Device Letters)
  6. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (IEEE Electron Device Letters)
  7. $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (IEEE Electron Device Letters)
  8. Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
  9. β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
  10. The 1.6-kV AlGaN/GaN HFETs (IEEE Electron Device Letters)

Their papers