Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs

By Hongpeng Zhang, Lei Yuan, Xiaoyan Tang, Jichao Hu, Jianwu Sun, Yimen Zhang, Yuming Zhang, Renxu Jia. IEEE transactions on power electronics, 2020

141 citations recorded by the source corpus.

As a promising ultra-wide bandgap semiconductor, the <italic>β</italic>-phase of Ga₂O₃ has attracted more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 eV), high theoretical breakdown electric field (8 MV/cm), and large Baliga's figure of merit, which is deemed as a potential candidate for next generation high-power electronics, including diodes, field effect transistors (FETs), etc. In this article, we introduce the basic material properties of Ga₂O₃, and review the recent progress and advances of <italic>β</italic>-Ga₂O₃ based metal–oxide–semiconductor field-effect transistors (<sc>mosfet</sc>s). Due to the problematic p-type doping technology up to now, the enhancement-mode (E-mode) <italic>β</italic>-Ga₂O₃ FETs face more difficulties, compared with depletion mode (D-mode). This article focuses on reviewing the recent progress of E-mode Ga₂O₃ <sc>mosfet</sc>s, summarizing and comparing various feasible solutions when p-type doping is absent. Furthermore, the device fabrication and performances of state-of-art <italic>β</italic>-Ga₂O₃ <sc>mosfet</sc>s, including D-mode, E-mode, and planar/vertical structure are fully discussed and compared, as well as potential solutions to the challenges of Ga₂O₃ FETs.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/17389b760b74698e71082da9269ca27a79f43c12